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    "
    antimony  Sb
    Available form
    Lump/powder/stick
    Application field

     

     

     
    Application Field
    Antimony blocks, antimony particles, antimony rods
     
    1. Technical docking: antimony trichloride SbCl3 -- rectification -- via hydrogen reduction -- antimony block -- pelleting under oxygen protection;
     
    2. Physical properties:
     
    Atomic weight: 121.760
     
    Electronegativity: 2.05
     
    Density: 6.697 g/cm3 (25 ℃)
     
    Melting point: 630.63 ℃
     
    Boiling point: 1587 ℃
     
    3. Physical properties: powder, block, ingot, bar, single crystal;
     
    4. Purpose:
     
    Is mainly used for the preparation of Ⅲ - Ⅴ compound semiconductor InSb, BiSb, GaSb, high purity alloy, electronic refrigeration components materials and germanium, heavily sb-doped silicon doping agent;
     

    Product description
    Describe
    Antimony blocks, antimony particles, antimony rods
    1. Technical docking: antimony trichloride SbCl3 -- rectification -- via hydrogen reduction -- antimony block -- pelleting under oxygen protection;
    2. Test: icp-ms (the total impurity content of 5N antimony is lower than 10ppm);
    3. Service: provide free samples, MSDS and practical protective measures, and solutions of applied materials;
    4. Physical properties:
    Atomic weight: 121.760
    Electronegativity: 2.05
    Density: 6.697 g/cm3 (25 ℃)
    Melting point: 630.63 ℃
    Boiling point: 1587 ℃
    5. Specifications:
    Chemical purity:
    High purity: Sb-05 purity 99.999% above, silver, arsenic, bismuth, cadmium, copper, iron, magnesium, manganese, silicon, nickel, lead, sulfur, zinc impurity total content less than 10ppm;
    Ultra pure antimony: sb-06 purity 99.9999% above, silver, arsenic, bismuth, cadmium, copper, iron, magnesium, manganese, silicon, nickel, lead, zinc impurity total content less than 1ppm;
    Ultra high purity antimony: sb-07 purity 99.99999% above, silver, arsenic, bismuth, cadmium, copper, iron, magnesium, manganese, silicon, nickel, lead, zinc impurity total content less than 0.1 PPM.
    6. Physical properties: powder, block, ingot, bar, single crystal;
    7. Purpose:
    Is mainly used for the preparation of Ⅲ - Ⅴ compound semiconductor InSb, BiSb, GaSb, high purity alloy, electronic refrigeration components materials and germanium, heavily sb-doped silicon doping agent;
    8. Packaging: three-layer vacuum packaging or argon filled protection;
    Other materials
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